Effect of the seed crystallographic orientation on AlN bulk crystal growth by PVT method

✍ Scribed by W. J. Wang; S. B. Zuo; H. Q. Bao; J. Wang; L. B. Jiang; X. L Chen

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 456 KB
• Volume: 46
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201100035

✦ Synopsis

Abstract

The growth of AlN crystals by PVT method was investigated using TaC crucible in the temperature range of 2250‐2350 °C. AlN boules with 30 mm in diameter were successfully grown on the crucible lid by self‐seeded growth. The AlN boules consist of the spontaneously nucleated AlN single crystal grains with the {1010} natural crystalline face. The fast growth rate of more than 1 mm/h was achieved. AlN crystals grown on (11$ \bar 2 $0)‐, (10$ \bar 1 $0)‐, and (0001)‐face AlN seeds were investigated. Different experimental phenomena have been observed under particular condition. The crystal grown on (11$ \bar 2 $0)‐face seed has different natural crystalline face from the seed. For the crystal grown on (10$ \bar 1 $0) or (0001) seed, the crystal natural crystalline face is same as the crystallographic orientation of the seed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)