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Point Defect Reactions around Dislocations in p-Type InP

✍ Scribed by Hanke, I. ;Schröter, W. ;Zozime, A.


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
707 KB
Volume
137
Category
Article
ISSN
0031-8965

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Defect states in Czochalski p-type silic
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## Abstract This contribution reports the study, by junction spectroscopies, of electronic states induced by thermal and deformation treatments in p‐type Si. In order to understand the role that oxygen precipitation, metallic contamination and plastic deformation play on the defect states, several