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Point defect interaction with α- and β-dislocations in InP

✍ Scribed by Zozime, A. ;Hanke, I. ;Schröter, W.


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
358 KB
Volume
138
Category
Article
ISSN
0031-8965

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We demonstrate that strained GeSi/Si heterostructures act as a model system for the study of the interaction of propagating dislocations with point, line and planar defects. In such heterostructures, the effective stress acting on a propagating dislocation may be varied from tens of MPa to of order