Interactions of Moving Dislocations in S
โ
Hull, R. ;Stach, E. A. ;Tromp, R. ;Ross, F. ;Reuter, M.
๐
Article
๐
1999
๐
John Wiley and Sons
๐
English
โ 269 KB
๐ 2 views
We demonstrate that strained GeSi/Si heterostructures act as a model system for the study of the interaction of propagating dislocations with point, line and planar defects. In such heterostructures, the effective stress acting on a propagating dislocation may be varied from tens of MPa to of order