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Diffusion–drift–aggregation model of the interaction of point defects and dislocations in semiconductors

✍ Scribed by H. S. Leipner; H. Lei

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 218 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200460518

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