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Stress Induced Anisotropic Diffusion of Intrinsic Point Defects towards Dislocations in H.C.P. Crystals

✍ Scribed by N. Smetniansk y-De Grande; E. J. Savino; C. N. Tomé

Publisher: John Wiley and Sons
Year: 1987
Tongue: English
Weight: 941 KB
Volume: 144
Category: Article
ISSN: 0370-1972
DOI: 10.1002/pssb.2221440125

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## Abstract The diffusion equation for the migration of low‐symmetry point defects in the presence of a field of force has been derived. The discreteness of the lattice and the capability of reorientation of the symmetry axes of the defects were taken into account. An essential point of this descri