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Point defect interactions and growth of dislocation loops

โœ Scribed by M.H. Yoo; J.O. Stiegler


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
272 KB
Volume
69-70
Category
Article
ISSN
0022-3115

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We demonstrate that strained GeSi/Si heterostructures act as a model system for the study of the interaction of propagating dislocations with point, line and planar defects. In such heterostructures, the effective stress acting on a propagating dislocation may be varied from tens of MPa to of order