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Defect states in Czochalski p-type silicon: the role of oxygen and dislocations

✍ Scribed by Castaldini, A. ;Cavalcoli, D. ;Cavallini, A. ;Pizzini, S.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
190 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

This contribution reports the study, by junction spectroscopies, of electronic states induced by thermal and deformation treatments in p‐type Si. In order to understand the role that oxygen precipitation, metallic contamination and plastic deformation play on the defect states, several sets of Cz (Czochalski) and Fz (Float‐zone) Si samples and different material treatments were investigated. The electronic states were also compared with optical transitions obtained by photoluminescence analyses carried out on the same sample sets. These defect states could thus be microscopically identified with specific defect types. (Β© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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