## Abstract This contribution reports the study, by junction spectroscopies, of electronic states induced by thermal and deformation treatments in pβtype Si. In order to understand the role that oxygen precipitation, metallic contamination and plastic deformation play on the defect states, several
β¦ LIBER β¦
Interaction between oxygen and dislocations in p-type silicon
β Scribed by D. Cavalcoli; A. Castaldini; A. Cavallini
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 304 KB
- Volume
- 90
- Category
- Article
- ISSN
- 1432-0630
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A review is given of the results of first principles calculations used to investigate the structures and electronic properties of screw and edge dislocations in GaN. The atoms at the core of the full core screw dislocation possess heavily strained bonds leading to deep gap states. Removing the first