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Plasma silicon micro etch


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
39 KB
Volume
17
Category
Article
ISSN
0961-1290

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Scaling of silicon trench etch rates and
โœ V.F. Lukichev; V.A. Yunkin ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 850 KB

Plasma etching of silicon trenches in a wide range of aspect ratios is studied theoretically and experimentally. A generalized relationship between the process parameters and trench geometry is derived and is verified by reactive ion etching of silicon structures in SF6/O 2 plasma. It is shown that