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Plasma enhanced deposition of ‘silicon nitride’ for use as an encapsulant for silicon ion-implanted gallium arsenide

✍ Scribed by DC Bartle; DC Andrews; JD Grange; PG Harris; AD Trigg; DK Wickenden


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
422 KB
Volume
34
Category
Article
ISSN
0042-207X

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