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Plasma enhanced deposition of “silicon nitride” for use as an encapsulant for silicon ion-implanted gallium arsenide : D. C. Bartle, D. C. Andrews, J. D. Grange, P. G. Harris, A. D. Trigg and D. K. Wickenden. Vacuum34 (1–2), 315 (1984)


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
136 KB
Volume
24
Category
Article
ISSN
0026-2714

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