Plasma deposition of low-dielectric-constant fluorinated amorphous carbon
โ Scribed by Endo, Kazuhiko; Shinoda, Keisuke; Tatsumi, Toru
- Book ID
- 120543743
- Publisher
- American Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 455 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.371119
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๐ SIMILAR VOLUMES
## ลฝ . Amorphous carbon nitride a-CN films have rather high resistivity and low dielectric constants that could be applied as x low dielectric constant materials. Several properties of a-CN films including interactions with metal electrodes are studied x and discussed using data from the frequency
Fluorinated amorphous carbon films (a-F : C) were deposited by high-density plasma-chemical vapor deposition (HDP-CVD) using C 4 F 8 and CH 4 as precursors. The deposition process was performed at two temperatures: $200 and $3508C. In order to study the thermal stability of the films, the samples we