Plasma CVD of high quality titanium nitride using titanium(IV)isopropoxide as precursor

✍ Scribed by A. Weber; R. Poeckelmann; C.-P. Klages

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 336 KB
• Volume: 33
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(96)00055-x

✦ Synopsis

High-quality TiN films were deposited in an electron-cyclotron-resonance (ECR) plasma process at low substrate temperatures between 100 and 450°C using titanium(IV)isopropoxide (TIP) {Ti[OCH(CH3)2]4} as a precursor. TIP was introduced into the downstream region of an ECR nitrogen or ammonia plasma. The electrical properties of the gold coloured TiN layers (100-400 Ixf~cm) depend mainly on the deposition rate. Despite the use of an oxygen-containing titanium precursor the oxygen content in the TiN was found to be <--2 at%. The measured resistivities and the purity of the TiN films indicate a selective separation of the isopropoxide ligand in the ECR downstream plasma. The films were characterized by resistivity measurements, secondary ion mass spectrometry (SIMS) and x-ray diffraction (XRD). Chemical ionization mass spectrometry (CIMS) investigations of the gas mixture in the reactor using nitrogen as plasma gas revealed the formation of acetone as a byproduct of the deposition process.