High-quality TiN films were deposited in an electron-cyclotron-resonance (ECR) plasma process at low substrate temperatures between 100 and 450°C using titanium(IV)isopropoxide (TIP) {Ti[OCH(CH3)2]4} as a precursor. TIP was introduced into the downstream region of an ECR nitrogen or ammonia plasma.
✦ LIBER ✦
Thermoanalytical study of acetylacetonate-modified titanium(IV) isopropoxide as a precursor for TiO2films
✍ Scribed by M. Krunks; I. Oja; K. Tőnsuaadu; M. Es-Souni; M. Gruselle; L. Niinistö
- Publisher
- Springer Netherlands
- Year
- 2005
- Tongue
- English
- Weight
- 178 KB
- Volume
- 80
- Category
- Article
- ISSN
- 0022-5215
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