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Plasma-assisted electroepitaxy as a novel method for the growth of GaN layers

✍ Scribed by S. V. Novikov; C. R. Staddon; R. E. L. Powell; A. V. Akimov; A. J. Kent; C. T. Foxon


Book ID
112182217
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
335 KB
Volume
9
Category
Article
ISSN
1862-6351

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Plasma-assisted electroepitaxy as a meth
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In the current study we have demonstrated the feasibility of a novel approach for the growth of the GaN layers namely plasma-assisted electroepitaxy (PAEE). In this method, we have tried to combine advantages of the plasma process for producing high concentrations of active N species in the Ga melt

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## Abstract We report on the self organized growth of GaN quantum dots deposited on Al~__x__~ Ga~1–__x__~ N layer by plasma‐assisted molecular beam epitaxy. It is found that the relaxation of Al~__x__~ Ga~1–__x__~ N layer on AlN depends on Al composition and thickness. The measurement of the variat