In the current study we have demonstrated the feasibility of a novel approach for the growth of the GaN layers namely plasma-assisted electroepitaxy (PAEE). In this method, we have tried to combine advantages of the plasma process for producing high concentrations of active N species in the Ga melt
β¦ LIBER β¦
Plasma-assisted electroepitaxy as a novel method for the growth of GaN layers
β Scribed by S. V. Novikov; C. R. Staddon; R. E. L. Powell; A. V. Akimov; A. J. Kent; C. T. Foxon
- Book ID
- 112182217
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 335 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1862-6351
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