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Plasma-assisted molecular beam epitaxy process combined with a liquid phase electroepitaxy, a novel method for the growth of GaN layers

โœ Scribed by Novikov, S.V.; Powell, R.E.L.; Kent, A.J.; Foxon, C.T.


Book ID
123348988
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
736 KB
Volume
378
Category
Article
ISSN
0022-0248

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Plasma-assisted electroepitaxy as a meth
โœ S.V. Novikov; C.R. Staddon; A.J. Kent; C.T. Foxon ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 439 KB

In the current study we have demonstrated the feasibility of a novel approach for the growth of the GaN layers namely plasma-assisted electroepitaxy (PAEE). In this method, we have tried to combine advantages of the plasma process for producing high concentrations of active N species in the Ga melt