Piezoresistive properties of polysilicon films

✍ Scribed by V.A. Gridchin; V.M. Lubimsky; M.P. Sarina

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 417 KB
• Volume: 49
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(95)01013-q

✦ Synopsis

A simple theoretical model for calculating the longitudinal, transverse and shear gauge factors of highly doped polycrystalline silicon films is presented. The calculation of the gauge factors is performed in terms of the elastoresistance and stiffness coefficients of monocrystalline silicon. The results for the longitudinal and transverse gauge factors are given in analytical form for (\langle 100\rangle,\langle 110\rangle) and (\langle 111\rangle) films. Borondoped polycrystalline silicon films have been investigated in the temperature range -190 to (+300^{\circ} \mathrm{C}) and the concentration range (7 \times 10^{19}-) (1 \times 10^{20} \mathrm{~cm}^{-3}). The presented theory is helpful for polycrystalline transducer designers.