An investigation into the structural, electrical and piezoresistive properties of \(\mathrm{SOI}\) (silicon-on-insulator) type structures is reported. The aim of our work is to evaluate how deposition and annealing conditions may change these properties. Various characterization experiments have bee
โฆ LIBER โฆ
Piezoresistive properties of polycrystalline and crystalline silicon films
โ Scribed by D. Schubert; W. Jenschke; T. Uhlig; F.M. Schmidt
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 767 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0250-6874
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