๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Piezoresistive properties of polycrystalline and crystalline silicon films

โœ Scribed by D. Schubert; W. Jenschke; T. Uhlig; F.M. Schmidt


Publisher
Elsevier Science
Year
1987
Weight
767 KB
Volume
11
Category
Article
ISSN
0250-6874

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Piezoresistance of boron-doped PECVD and
โœ M. Le Berre; M. Lemiti; D. Barbier; P. Pinard; J. Cali; E. Bustarret; J. Sicart; ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 358 KB

An investigation into the structural, electrical and piezoresistive properties of \(\mathrm{SOI}\) (silicon-on-insulator) type structures is reported. The aim of our work is to evaluate how deposition and annealing conditions may change these properties. Various characterization experiments have bee

Piezoresistive properties of polysilicon
โœ V.A. Gridchin; V.M. Lubimsky; M.P. Sarina ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 417 KB

A simple theoretical model for calculating the longitudinal, transverse and shear gauge factors of highly doped polycrystalline silicon films is presented. The calculation of the gauge factors is performed in terms of the elastoresistance and stiffness coefficients of monocrystalline silicon. The re