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Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers

✍ Scribed by Zhang, Y.; Fischetti, M. V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M.

Book ID: 125425096
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 525 KB
Volume: 106
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3245327

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