✦ LIBER ✦

Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures

✍ Scribed by K. Sawano; Y. Kunishi; K. Toyama; T. Okamoto; N. Usami; K. Nakagawa; Y. Shiraki

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 155 KB
Volume: 40
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2007.10.012

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of increased compressive strain

Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels

✍ K. Sawano; K. Toyama; R. Masutomi; T. Okamoto; K. Arimoto; K. Nakagawa; N. Usami 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 502 KB

Temperature dependence of intrinsic carr

Temperature dependence of intrinsic carrier concentration and density of states effective mass of heavy holes in InSb

✍ M. Oszwałldowski; M. Zimpel 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 512 KB

A systematic investigation of the effect

A systematic investigation of the effect of the material and the structural parameters on the hole states in strained p–Si/Si1 − xGex/p–Si selectively doped double heterojunctions structures

✍ Georgios Hionis; Georgios P. Triberis 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 143 KB

The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the Schrödinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulat