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Temperature dependence of intrinsic carrier concentration and density of states effective mass of heavy holes in InSb

✍ Scribed by M. Oszwałldowski; M. Zimpel

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
512 KB
Volume
49
Category
Article
ISSN
0022-3697

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In this paper, the effective densities of states for the conduction and valence bands, Nc and N,, the intrinsic carrier concentration ni and the ionized doping concentration in strained Si,\_,Ge, layers grown on (001) Si substrates are analytically calculated, and their temperature and Ge fraction d