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Photosensitive CdS thin films by reactive rf sputtering. (France)


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
165 KB
Volume
28
Category
Article
ISSN
0042-207X

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CdS Thin Films Prepared by RF Magnetron
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CdS thin films were prepared using rf planar magnetron sputtering in Ar atmosphere. Different deposition temperatures between 150 and 250 C and different rf powers between 30 and 130 W were used. The films had hexagonal structure with crystallites oriented in the h100i direction. The increase of dep

Trap Levels in RF Sputtered CdS Thin Fil
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The trap levels in CdS thin films prepared by rf magnetron sputtering have been investigated using Photoinduced Current Transient Spectroscopy (PICTS). Trap levels in the range 0.08-1.06 eV have been detected. Those levels are tentatively attributed to native defects and foreign impurities (particul