โ Scribed by Bru-Chevallier, C. ;Fanget, S. ;Philippe, A.
No coin nor oath required. For personal study only.
Extensive research has been reported on the wide band gap nitride materials system in the past few years. Despite the development of many wellโworking GaN based optoโ and electronic devices, theoretical and experimental understanding of many fundamental properties remains still incomplete.
In this paper, we show the unique benefits that can be drawn from optical modulation spectroscopy as applied to nitride materials, despite the difficulties in working in the UV spectral range, that is required for the photoreflectance measurements of wide band gap semiconductors.
By performing PR spectroscopy at low temperature in cubic phase GaN layers grown on cโSiC pseudoโsubstrates, the different valence band excitons are measured and compared with theoretical calculations, allowing the determination of residual strain inside the epitaxial layer. The second part of the paper is devoted to emphasize the unique interest of PR spectroscopy in the Franz Keldysh oscillations regime, especially in the case of wurtzite phase GaN/AlGaN quantum structures, in order to extract the piezoelectric field in a nonโdestructive allโoptical experiment. (ยฉ 2005 WILEYโVCH Verlag GmbH & Co. KGaA, Weinheim)
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Hydrogen is an important component of the gas-phase growth chemistry for GaN, which is typically based on NH 3 and (CH 3 ) 3 Ga, and also the processing environment for subsequent device fabrication (e.g., SiH 4 for dielectric deposition, NH 3 or H 2 annealing ambients), and is found to readily perm
semiconductors, including gallium nitride, indium nitride, silicon carbide, zinc oxide and diamond. Many papers related to the achievement of higher levels of p-dopant activity, which is a continuing requirement for wide-gap semiconductor development, particularly for blue and violet lasers as well