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Co-doping wide-bandgap semiconductors

✍ Scribed by Alan Mills

Book ID
104365561
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
699 KB
Volume
14
Category
Article
ISSN
0961-1290

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✦ Synopsis

semiconductors, including gallium nitride, indium nitride, silicon carbide, zinc oxide and diamond. Many papers related to the achievement of higher levels of p-dopant activity, which is a continuing requirement for wide-gap semiconductor development, particularly for blue and violet lasers as well as high-power electronic devices.

πŸ“œ SIMILAR VOLUMES

Photoreflectance on wide bandgap nitride
Photoreflectance on wide bandgap nitride semiconductors
✍ Bru-Chevallier, C. ;Fanget, S. ;Philippe, A. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 491 KB

## Abstract Extensive research has been reported on the wide band gap nitride materials system in the past few years. Despite the development of many well‐working GaN based opto‐ and electronic devices, theoretical and experimental understanding of many fundamental properties remains still incomple