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Wide bandgap semiconductors

Book ID
104418367
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
76 KB
Volume
10
Category
Article
ISSN
1369-7021

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πŸ“œ SIMILAR VOLUMES

Co-doping wide-bandgap semiconductors
Co-doping wide-bandgap semiconductors
✍ Alan Mills πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 699 KB

semiconductors, including gallium nitride, indium nitride, silicon carbide, zinc oxide and diamond. Many papers related to the achievement of higher levels of p-dopant activity, which is a continuing requirement for wide-gap semiconductor development, particularly for blue and violet lasers as well

Photoreflectance on wide bandgap nitride
Photoreflectance on wide bandgap nitride semiconductors
✍ Bru-Chevallier, C. ;Fanget, S. ;Philippe, A. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 491 KB

## Abstract Extensive research has been reported on the wide band gap nitride materials system in the past few years. Despite the development of many well‐working GaN based opto‐ and electronic devices, theoretical and experimental understanding of many fundamental properties remains still incomple