Wide-bandgap semiconductor ultraviolet photodetectors
✍ Scribed by Monroy, E; Omn s, F; Calle, F
- Book ID
- 115523286
- Publisher
- Institute of Physics
- Year
- 2003
- Tongue
- English
- Weight
- 561 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0268-1242
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semiconductors, including gallium nitride, indium nitride, silicon carbide, zinc oxide and diamond. Many papers related to the achievement of higher levels of p-dopant activity, which is a continuing requirement for wide-gap semiconductor development, particularly for blue and violet lasers as well
## Abstract Extensive research has been reported on the wide band gap nitride materials system in the past few years. Despite the development of many well‐working GaN based opto‐ and electronic devices, theoretical and experimental understanding of many fundamental properties remains still incomple