๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Substrates for wide bandgap nitrides

โœ Scribed by M. Seyboth; S.-S. Schad; M. Scherer; F. Habel; C. Eichler; M. Kamp; V. Schwegler


Book ID
110397615
Publisher
Springer US
Year
2002
Tongue
English
Weight
668 KB
Volume
13
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Photoreflectance on wide bandgap nitride
โœ Bru-Chevallier, C. ;Fanget, S. ;Philippe, A. ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 491 KB

## Abstract Extensive research has been reported on the wide band gap nitride materials system in the past few years. Despite the development of many wellโ€working GaN based optoโ€ and electronic devices, theoretical and experimental understanding of many fundamental properties remains still incomple

Role of Hydrogen in the CVD of Wide Band
โœ Stephen J. Pearton; Alexander Y. Polyakov ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 386 KB ๐Ÿ‘ 1 views

Hydrogen is an important component of the gas-phase growth chemistry for GaN, which is typically based on NH 3 and (CH 3 ) 3 Ga, and also the processing environment for subsequent device fabrication (e.g., SiH 4 for dielectric deposition, NH 3 or H 2 annealing ambients), and is found to readily perm

Nanoscale Ultraviolet-Light-Emitting Dio
โœ H.-M. Kim; T.W. Kang; K.S. Chung ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 175 KB

**The fabrication of pโ€“n junctions in individual GaN nanorods** has been realized using hydride vapor phase epitaxy. Application of the resulting heterostructures as wide bandgap current rectifiers with a high breakdown voltage and for near UV lightโ€emitting diodes is demonstrated. The Figure is a l