✦ LIBER ✦

Nanoscale Ultraviolet-Light-Emitting Diodes Using Wide-Bandgap Gallium Nitride Nanorods

✍ Scribed by H.-M. Kim; T.W. Kang; K.S. Chung

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 175 KB
Volume: 15
Category: Article
ISSN: 0935-9648
DOI: 10.1002/adma.200304554

No coin nor oath required. For personal study only.

✦ Synopsis

The fabrication of p–n junctions in individual GaN nanorods has been realized using hydride vapor phase epitaxy. Application of the resulting heterostructures as wide bandgap current rectifiers with a high breakdown voltage and for near UV light‐emitting diodes is demonstrated. The Figure is a luminescence image of the light emitted from a forward‐biased nanorod p–n junction at 3 V.

📜 SIMILAR VOLUMES

A Wide-Bandgap Semiconducting Polymer fo

A Wide-Bandgap Semiconducting Polymer for Ultraviolet and Blue Light Emitting Diodes

✍ Ping Lu; Haiquan Zhang; Fangzhong Shen; Bing Yang; Di Li; Yuguang Ma; Xinfang Ch 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 177 KB

## Abstract A novel wide‐bandgap conjugated polymer (PDHFSCHD) consisting of alternating dihexylfluorene and rigidly twisted biphenyl units has been synthesized. The new fluorene‐based copolymer composed of rigid twisting segments in the main‐chain exhibits an optical bandgap of as high as 3.26 eV,