**The fabrication of p–n junctions in individual GaN nanorods** has been realized using hydride vapor phase epitaxy. Application of the resulting heterostructures as wide bandgap current rectifiers with a high breakdown voltage and for near UV light‐emitting diodes is demonstrated. The Figure is a l
A Wide-Bandgap Semiconducting Polymer for Ultraviolet and Blue Light Emitting Diodes
✍ Scribed by Ping Lu; Haiquan Zhang; Fangzhong Shen; Bing Yang; Di Li; Yuguang Ma; Xinfang Chen; Jinghong Li; Naoto Tamai
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 177 KB
- Volume
- 204
- Category
- Article
- ISSN
- 1022-1352
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✦ Synopsis
Abstract
A novel wide‐bandgap conjugated polymer (PDHFSCHD) consisting of alternating dihexylfluorene and rigidly twisted biphenyl units has been synthesized. The new fluorene‐based copolymer composed of rigid twisting segments in the main‐chain exhibits an optical bandgap of as high as 3.26 eV, and a highly efficient ultraviolet emission with peaks at 368 nm and 386 nm. An electroluminescence device from PDHFSCHD neat film as an active layer shows UV emission which peaks at 395 nm with a turn on voltage below 8 V. By optimizing the device conditions, a peak EL quantum efficiency of 0.054% and brightness of 10 cd · m^−2^ was obtained. Furthermore, blending a poly(dihexylfluorene) in the PDHFSCHD host gave pure blue emission peaking at 417 nm and 440 nm without long wavelength emission from aggregated species. Efficient energy transfer from PDHFSCHD to PDHF was demonstrated in these blended systems. Depressed chain‐aggregation of PDHF in the PDHFSCHD host can correspond to pure blue emission behaviors.
The structure of the copolymer PDHFSCHD.
magnified imageThe structure of the copolymer PDHFSCHD.
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