Photoluminescent properties of InN epifilms
β Scribed by Fu, S P; Chen, T T; Chen, Y F
- Book ID
- 121506508
- Publisher
- Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 158 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0268-1242
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## Abstract In this paper, the achievement of nearly intrinsic InN nanowire is reported. With the use of an in situ deposited In seeding layer, nearly defectβfree, nonβtapered InN nanowires are grown directly on Si(111) substrates by molecular beam epitaxy. The photoluminescence emission of a singl
## Abstract Photoluminescence (PL) of nβInN grown by molecular beam epitaxy with Hall concentrations from 3.6Β ΓΒ 10^17^ to 1.0Β ΓΒ 10^18^Β cm^β3^ demonstrates new features as compared with that of the samples of previous generation which are characterized by a higher carrier concentration. The striking