## Abstract In this paper, the achievement of nearly intrinsic InN nanowire is reported. With the use of an in situ deposited In seeding layer, nearly defect‐free, non‐tapered InN nanowires are grown directly on Si(111) substrates by molecular beam epitaxy. The photoluminescence emission of a singl
✦ LIBER ✦
Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires
✍ Scribed by Stoica, Toma; Meijers, Ralph J.; Calarco, Raffaella; Richter, Thomas; Sutter, Eli; Lüth, Hans
- Book ID
- 124050163
- Publisher
- American Chemical Society
- Year
- 2006
- Tongue
- English
- Weight
- 307 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1530-6984
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