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GaN and InN nanowires grown by MBE: A comparison

✍ Scribed by R. Calarco; M. Marso

Book ID: 106020431
Publisher: Springer
Year: 2007
Tongue: English
Weight: 357 KB
Volume: 87
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s00339-007-3871-6

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## Abstract The structural properties of the interfacial area of InN thin films, grown by rf‐plasma MBE on top of GaN/Al~2~O~3~ substrates have been investigated by TEM and HRTEM. Continuous or columnar film growth highly depends on the pre‐growth of an InN nucleation layer and low substrate temper

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