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Fabrication and analysis of GaN nanorods grown by MBE

✍ Scribed by N. A. Sanford; L. H. Robins; M. H. Gray; Y.-S. Kang; J. E. Van Nostrand; C. Stutz; R. Cortez; A. V. Davydov; A. Shapiro; I. Levin; A. Roshko


Book ID
104557601
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
285 KB
Volume
2
Category
Article
ISSN
1862-6351

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This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic