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Photoluminescence properties of selectively grown InN microcrystals

✍ Scribed by Jumpei Kamimura; Katsumi Kishino; Akihiko Kikuchi

Book ID
112183282
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
587 KB
Volume
6
Category
Article
ISSN
1862-6254

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## Abstract In this paper, the achievement of nearly intrinsic InN nanowire is reported. With the use of an in situ deposited In seeding layer, nearly defect‐free, non‐tapered InN nanowires are grown directly on Si(111) substrates by molecular beam epitaxy. The photoluminescence emission of a singl