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Electroreflectance and photoluminescence study of InN

✍ Scribed by Yoon, Jung-Won; Kim, Sung Soo; Cheong, Hyeonsik; Seo, Hui-Chan; Kwon, Soon-Yong; Kim, Hee Jin; Shin, Yoori; Yoon, Euijoon; Park, Yoon-Soo

Book ID
121232796
Publisher
Institute of Physics
Year
2005
Tongue
English
Weight
230 KB
Volume
20
Category
Article
ISSN
0268-1242

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Contactless electroreflectance and photoluminescence study of highly strained InGaAs(Sb) double quantum wells
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## Abstract InGaAs(Sb)/GaAs double quantum wells (DQWs) structures grown with Sb assistance under different Sb/V ratios by metalorganic vapor‐phase epitaxy (MOVPE) have been characterized as a function of temperature in the temperature range between 17 and 300 K by the techniques of contactless ele