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Photoluminescence and x-ray diffraction measurements of InN epifilms grown with varying In∕N ratio by plasma-assisted molecular-beam epitaxy

✍ Scribed by Yao, Yong-zhao; Sekiguchi, Takashi; Ohashi, Naoki; Adachi, Yutaka; Ohgaki, Takeshi


Book ID
121791860
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
444 KB
Volume
92
Category
Article
ISSN
0003-6951

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Photoluminescence and X-ray diffraction
✍ S.F. Yoon; P.H. Zhang; H.Q. Zheng 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 516 KB

We have investigated the effect of substrate temperature (Ts varied from 410 to 560°C) on the crystalline and optical properties of In l\_x\_rGaxAlyAs layers grown on InP substrates by molecular beam epitaxy (MBE). The quaternary samples were analysed using double axis X-ray diffraction (XRD), low t