Photoluminescence study of proton-implanted InP1−xAsx:Yb
✍ Scribed by J. Tatarkiewicz; A. Kozanecki; Z. Kaliński; K. Paprocki
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 405 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0169-4332
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We report the results" of photoluminescence (PL) measurements on zinc-implanted silicon with a boron concentration of about 1014 cm 3. Annealing in the range 600-800 °C produces new luminescence spectra, consisting of a group of broad lines in the range 800-1000 meV and two vibronic bands" labelled
Damage in n-GaAs implanted with 100 MeV 28 Si ions has been investigated using low temperature (T $ 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 10 16 ions m À2 , 10 17 ions m À2 and 10 18 ions m À2 , respectively and annealed at various temperatures up to 1000 °C