A photoluminescence study of zinc-implanted silicon

✍ Scribed by M.O. Henry; J.D. Campion; K.G. McGuigan; M.L.W. Thewalt; E.C. Lightowlers

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 286 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90242-0

✦ Synopsis

We report the results" of photoluminescence (PL) measurements on zinc-implanted silicon with a boron concentration of about 1014 cm 3. Annealing in the range 600-800 °C produces new luminescence spectra, consisting of a group of broad lines in the range 800-1000 meV and two vibronic bands" labelled Zn ~ and Znt~ with principal zerophonon lines at 1129.82+_0.05 meV and 1090.68++_0.05 meV, respectively. Neither of the two main lines shift or split in magnetic fields of up to 4 Tesla. Decay time measurements at 4.2 K yield values of 1 ms and 1.4 ms for the Zn A and Zn B lines, respectively. The temperature dependence of the luminescence intensities and decay times are typical of isoelectronic bound exciton (IBE) recombination. The energy level structures are similar to those observed for indium-and thallium-doped silicon, and the data add to the evidence that deep acceptors produce a distinctive family of lBE spectra in silicon.