4 K photoluminescence characterization of silicon implanted GaAs
β Scribed by C. Lamberti; A. Antolini; S. Bianchi; A. Castelli; M. Dellagiovanna
- Publisher
- Springer
- Year
- 1996
- Tongue
- English
- Weight
- 305 KB
- Volume
- 100
- Category
- Article
- ISSN
- 1434-6036
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We report the results" of photoluminescence (PL) measurements on zinc-implanted silicon with a boron concentration of about 1014 cm 3. Annealing in the range 600-800 Β°C produces new luminescence spectra, consisting of a group of broad lines in the range 800-1000 meV and two vibronic bands" labelled
Semi-insulating GaAs samples co-implanted with silicon and carbon have been studied by electrical and optical measurements in order to evaluate the compensation level obtained with different post-implant thermal treatments. A triple implant of silicon at different energies and doses has been perform
## Abstract The surface of siliconβdoped GaAs (100) grown by the vertical Bridgman method has been implanted with H^+^ ions at 30 keV for various doses from 10^14^ to 10^17^ cm^β2^ and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantat