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Photoluminescence Spectra of Si-Implanted GaAs

✍ Scribed by Shigetomi, S. ;Matsumori, T.

Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
170 KB
Volume
89
Category
Article
ISSN
0031-8965

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Damage in n-GaAs implanted with 100 MeV 28 Si ions has been investigated using low temperature (T $ 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 10 16 ions m Γ€2 , 10 17 ions m Γ€2 and 10 18 ions m Γ€2 , respectively and annealed at various temperatures up to 1000 Β°C