Photoluminescence studies of ion implantation damage in a-Si:H
β Scribed by T.M. Searle; W.A. Jackson; S. Kalbitzer
- Book ID
- 115986683
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 174 KB
- Volume
- 114
- Category
- Article
- ISSN
- 0022-3093
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## Abstract The surface of siliconβdoped GaAs (100) grown by the vertical Bridgman method has been implanted with H^+^ ions at 30 keV for various doses from 10^14^ to 10^17^ cm^β2^ and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantat
Damage in n-GaAs implanted with 100 MeV 28 Si ions has been investigated using low temperature (T $ 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 10 16 ions m Γ2 , 10 17 ions m Γ2 and 10 18 ions m Γ2 , respectively and annealed at various temperatures up to 1000 Β°C