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A comparative EPR study of ion implantation induced damage in Si, Si1−xGex (x ≠ 0) and SiC

✍ Scribed by R.C. Barklie

Book ID
114168410
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
777 KB
Volume
120
Category
Article
ISSN
0168-583X

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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 × 10^15^ at/cm^2^ is reached, a highly disordered ‘nanocry