In pulsed high magnetic fields up to 40 T perpendicular to layers, we investigated photoluminescence (PL) from quasizero-dimensional carriers in modulation-doped GaAs/A1GaAs quantum wells for various electron densities at 77 K. We observed an oscillation of PL intensity due to magnetophonon resonanc
Photoluminescence spectra of modulation-doped GaAs/AlGaAs heterointerfaces
β Scribed by Emil S. Koteles; J.Y. Chi
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 234 KB
- Volume
- 2
- Category
- Article
- ISSN
- 0749-6036
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π SIMILAR VOLUMES
Self-consistent calculations have been performed to obtain the wave functions and energy subbands of the two-dimensional electrons confined in a single quantum well of a AlxGal\_xAs/GaAs/AlxGal\_xAs heterostructure. The wave functions of the two-dimensional electron gas are found to be easily contro
We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show