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Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE

โœ Scribed by H. Lipsanen; J. Ahopelto; T. Koljonen; M. Sopanen


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
132 KB
Volume
145
Category
Article
ISSN
0022-0248

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InGaAs quantum wires (QWRs) and InGaAs quantum wire-dot coupled structures were formed by selective MBE growth on patterned InP substrates, and attempts were made to realize single-electron transistors (SETS) on them. Investigation of basic optical and transport characteristics of both nanostructure