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Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy Films Grown by MOVPE

โœ Scribed by S. Sanorpim; F. Nakajima; S. Imura; R. Katayama; J. Wu; K. Onabe; Y. Shiraki

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
286 KB
Volume
234
Category
Article
ISSN
0370-1972

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โœ M. Souissi; Z. Chine; A. Bchetnia; H. Touati; B. El Jani ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 147 KB

This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in the 9-300 K range. Samples have been successfully prepared on sapphire substrates by metalorganic vapour phase epitaxy technique (MOVPE). At room temperature (RT) the PL spectra of GaN: V are dominated by a blue ban