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Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE

✍ Scribed by R. Schwedler; B. Gallman; K. Wolter; A. Kohl; K. Leo; H. Kurz; S. Juillaguet; J. Camassel; J.P. Laurenti; F.H. Baumann

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interface properties of strained InGaAs/

✍ R. Schwedler; B. Gallmann; K. Wolter; A. Kohl; K. Leo; H. Kurz; F.H. Baumann 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 338 KB

InGaAs/InP strained layer quantum wells

✍ S. Loualiche; A. Le Corre; A. Godefroy; F. Clerot; D. Lecrosnier; A. Poudoulec; 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 289 KB

Interface roughness and charge carrier r

✍ M. Engel; R.K. Bauer; D. Bimberg; D. Grützmacher; H. Jürgensen 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 490 KB

Sharp interfaces in GaInAsP/InP single q

✍ M. Irikawa; I.J. Murgatroyd; T. Ijichi; N. Matsumoto; A. Nakai; S. Kashiwa 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 448 KB

Finite interface effects for thin GaInAs

✍ J. Camassel; J.P. Laurenti; S. Juillaguet; F. Reinhardt; K. Wolter; H. Kurz; D. 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 368 KB

Interface characterization of strained I

✍ R. Schwedler; B. Gallmann; K. Wolter; A. Kohl; K. Leo; H. Kurz; S. Juillaguet; E 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 217 KB