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Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence

✍ Scribed by R. Schwedler; B. Gallmann; K. Wolter; A. Kohl; K. Leo; H. Kurz; S. Juillaguet; E. Massone; J. Camassel; J.P. Laurenti; F.H. Baumann

No coin nor oath required. For personal study only.

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Interface properties of strained InGaAs/

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