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Growth and characterization of strain-compensated InGaAs/GaAsSb type II multiple quantum wells on InP substrate

✍ Scribed by Y. Yonezawa; R. Hiraike; K. Miura; Y. Iguchi; Y. Kawamura

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 344 KB
Volume: 42
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2009.12.030

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