𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth and characterization of GaSb/AlSb multiple quantum well structures on Si(111) and Si(001) substrates

✍ Scribed by H. Toyota; S. Fujie; M. Haneta; A. Mikami; T. Endoh; Y. Jinbo; N. Uchitomi

Publisher
Elsevier
Year
2010
Tongue
English
Weight
839 KB
Volume
3
Category
Article
ISSN
1875-3892

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

InGaN Multiple-Quantum-Well Light Emitti
InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates
✍ Zhang, B.J. ;Egawa, T. ;Ishikawa, H. ;Nishikawa, N. ;Jimbo, T. ;Umeno, M. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 89 KB πŸ‘ 2 views

Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for

GaN on Si(111): From Growth Optimization
GaN on Si(111): From Growth Optimization to Optical Properties of Quantum Well Structures
✍ F. Semond; B. Damilano; S. VΓ©zian; N. Grandjean; M. Leroux; J. Massies πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 171 KB πŸ‘ 2 views

In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer-by-layer two-dimensional growth mode allows to obtain reflection high-energy electron diffraction intensity